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TPCP8901
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications Switching Applications
* * * * Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) : NPN High-speed switching : PNP : NPN VCE (sat) = 0.17 V (max)
S
Unit: mm
0.330.05 0.05 M A
8 5
2.40.1 0.475
1 4
Low collector-emitter saturation : PNP VCE (sat) = -0.20 V (max) tf = 70 ns (typ.) tf = 85 ns (typ.)
0.65 2.90.1
B A
0.05 M B
0.80.05 0.025
S
0.170.02
0.28 +0.1 -0.11
+0.13
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Single-device operation Single-device value at dual operation Single-device operation Single-device value at dual operation PC (Note 2) 0.48 Tj Tstg 150 -55 to 150 C C PC (Note 2) 0.80 DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB Rating PNP -50 -50 -7 -0.8 -5.0 -100 1.48 W NPN 100 50 7 1.0 5.0 100 Unit V V V A mA
1.Emitter1 2.Base1 3.Emitter2 4.Base2
5.Collector2 6.Collector2 7.Collector1 8.Collector1
1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11
JEDEC JEITA TOSHIBA
2-3V1C
Pulse (Note 1 )
Weight: 0.017 g (typ.)
Collector power dissipation (t = 10s)
0.83 W
Collector power dissipation (DC)
Junction temperature Storage temperature range
Note 1: Please use devices on condition that the junction temperature is below 150. Icp=5A (@ t100s)
2 Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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2.80.1
TPCP8901
Figure 1. Circuit configuration (top view) Figure 2. Marking (Note 4)
8 7
6
5 Q2
8 7
65
Q1
8901
1 2 3 4
Type
1
2
3
4
Note 4: on lower left on the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year)
Lot No. (Weekly code)
Electrical Characteristics (Ta = 25C)
PNP
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.1 A VCE = -2 V, IC = -0.3 A IC = -0.3 A, IB = -0.01 A IC = -0.3 A, IB = -0.01 A VCB = -10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCC -30 V, RL = 100 - -IB1 = IB2 = -10 mA Min -50 200 125 Typ. 8 60 280 70 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V
NPN
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.3 A IC = 300 mA, IB = 6 mA IC = 300 mA, IB = 6 mA VCB = 10 V, IE = 0, f = 1MHz See Figure 4 circuit diagram VCC 30 V, RL = 100 - IB1 = -IB2 = 10 mA Min 50 400 200 Typ. 5 35 680 85 Max 100 100 1000 0.17 1.10 ns V V pF Unit nA nA V
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TPCP8901
Figure 3. Switching Time Test Circuit & Timing Chart
20s IB1 RL Input Output I B2 IB1 I B2
Duty cycle 1% IB1 IB2 Duty cycle 1% IB2 Input IB1
Figure 4. Switching Time Test Circuit & Timing Chart
20s VCC RL Output
VCC
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TPCP8901
NPN
IC - VCE
1.0 20 15 10 8 10000
hFE - IC
(A)
0.8
6 4
Ta = 100C
IC
hFE
1000 -55C
DC current gain
Collector current
0.6 2 0.4 IB = 1 mA
25C 100
10 Common emitter VCE = 2 V Single nonrepetitive pulse 0.01 0.1 1
0.2
0 0
Common emitter Ta = 25C Single nonrepetitive pulse 0.2 0.4 0.6 0.8 1.0 1.2
1 0.001
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
1
VBE (sat) - IC
10 Common emitter = 50 Single nonrepetitive pulse
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
Common emitter = 50 Single nonrepetitive pulse
0.1
Ta = 100C
1
Ta = -55C
-55C
100C 25C
25C 0.01 0.001
0.01
0.1
1
0.1 0.001
0.01
0.1
1
Collector current
IC
(A)
Collector current
IC
(A)
Safe Operation Area
10 IC max (Pulsed)
IC - VBE
1.0 Common emitter VCE = 2 V Single nonrepetitive pulse
100 s IC max (Pulsed) 10 ms 1 ms
10 s
(A)
(A)
0.8
IC
1
IC max (Continuous)* 100 ms* 10 s* DC operation Ta = 25C
Collector current
0.6 Ta = 100C 0.4 -55C
Collector current
IC
0.2
25C
0 0
0.2
0.4
0.6
0.8
1.0
1.2
*: Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1
10
VCEO max 100
Base-emitter saturation voltage
VBE
(V)
Collector-emitter voltage
VCE
(V)
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TPCP8901
PNP
IC - VCE
1.0 -100 -50 -40 -30 10000 Common emitter VCE = -2 V Single nonrepetitive pulse
hFE - IC
(A)
0.8
-IC
-15 0.6 -10 -5 0.4 -2 IB = -1 mA 0.2 Common emitter Ta = 25C 0 0 Single nonrepetitive pulse 0.2 0.4 0.6 0.8 1.0 1.2
Collector current
DC current gain
hFE
-20
1000
Ta = 100C
100
25C
-55C
10
1 0.001
0.01
0.1
1
Collector-emitter voltage
-VCE
(V)
Collector current
-IC
(A)
VCE (sat) - IC
10
VBE (sat) - IC
10 Common emitter = 30 Single nonrepetitive pulse
Collector-emitter saturation voltage -VCE (sat) (V)
Common emitter Single nonrepetitive pulse
1
0.1
Ta = 100C -55C
Base-emitter saturation voltage -VBE (sat) (V)
= 30
1
Ta = -55C
0.01
25C
100C 25C
0.001 0.001
0.01
0.1
1
0.1 0.001
0.01
0.1
1
Collector current
-IC
(A)
Collector current
-IC
(A)
Safe operation area
10 IC max (Pulse)
IC - VBE
1.0 VCE = -2 V Single nonrepetitive pulse
100 s IC max (Pulse) 10 ms 1 ms
10 s
(A)
Common emitter
(A)
0.8
-IC
1
IC max (Continuous)*
100 ms*
-IC
0.6 Ta = 100C 0.4 -55C
Collector current
10 s* *: Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1
Collector current
0.2
25C
DC operation Ta = 25C 10
0 0
0.2
0.4
0.6
0.8
VCEO max 100
1.0
1.2
Base-emitter saturation voltage
-VBE
(V)
Collector-emitter voltage
-VCE (V)
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TPCP8901
Common
rth - tw
1000
Transient thermal resistance rth(j-a) (C/W)
100
10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Single-device operation 0.01 0.1 1 10 100 1000
1 0.001
Pulse width
tw
(s)
Permissible Power Dissipation for Simultaneous Operation Permissible power dissipation for Q2 PC (W)
1.0 DC operation Ta = 25C Mounted on an FR4 board glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
0.8
0.6
0.4
0.2
0 0
0.2
0.4
0.6
0.8
1.0
Permissible power dissipation for Q1 PC (W)
Collector power dissipation at the single-device operation is 0.83W. Collector power dissipation at the single-device value at dual operation is 0.48W. Collector power dissipation at the dual operation is set to 0.96W.
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TPCP8901
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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